Modeling Transient Negative Capacitance in Steep-Slope FeFETs
نویسندگان
چکیده
منابع مشابه
Steep switching devices for low power applications: negative differential capacitance/resistance field effect transistors
Simply including either single ferroelectric oxide layer or threshold selector, we can make conventional field effect transistor to have super steep switching characteristic, i.e., sub-60-mV/decade of subthreshold slope. One of the representative is negative capacitance FET (NCFET), in which a ferroelectric layer is added within its gate stack. The other is phase FET (i.e., negative resistance ...
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ژورنال
عنوان ژورنال: IEEE Transactions on Electron Devices
سال: 2018
ISSN: 0018-9383,1557-9646
DOI: 10.1109/ted.2018.2868479